CEB80N15 MOSFET Transistor

The CEB80N15 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB80N15 transistor as follows.

CEB80N15 Transistor Specification

Transistor Code		CEB80N15
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	76A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.019Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		455pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		24nS
Total Gate Charge		262nC

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