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CEB75N10 MOSFET Transistor

The CEB75N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB75N10 transistor as follows.

Circuit diagram symbol of the CEB75N10 transistor

CEB75N10 Transistor Specification

Transistor Code CEB75N10
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 72A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.013Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 240pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 9nS

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