CEB740G MOSFET Transistor

The CEB740G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB740G transistor as follows.

CEB740G Transistor Specification

Transistor Code		CEB740G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.55Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Total Gate Charge		35.6nC

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