CEB73A3G MOSFET Transistor

The CEB73A3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB73A3G transistor as follows.

CEB73A3G Transistor Specification

Transistor Code		CEB73A3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	62A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		265pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		9nS

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