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CEB630N MOSFET Transistor

The CEB630N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB630N transistor as follows.

Circuit diagram symbol of the CEB630N transistor

CEB630N Transistor Specification

Transistor Code CEB630N
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.36Ohm
Power Dissipation (Maximum) PD 78W
Drain-Source Capacitance 130pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS

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