CEB6186 MOSFET Transistor

The CEB6186 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB6186 transistor as follows.

CEB6186 Transistor Specification

Transistor Code		CEB6186
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	43W
Drain-Source Capacitance		125pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		5nS

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