CEB60N10 MOSFET Transistor

The CEB60N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB60N10 transistor as follows.

CEB60N10 Transistor Specification

Transistor Code		CEB60N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	57A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.024Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		440pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		5nS
Total Gate Charge		64nC

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