CEB60N06G MOSFET Transistor

The CEB60N06G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB60N06G transistor as follows.

CEB60N06G Transistor Specification

Transistor Code		CEB60N06G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		495pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		17nS
Total Gate Charge		52nC

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