CEB6086L MOSFET Transistor

The CEB6086L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB6086L transistor as follows.

CEB6086L Transistor Specification

Transistor Code		CEB6086L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	72A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		235pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		10nS
Total Gate Charge		32nC

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