CEB6056 MOSFET Transistor

The CEB6056 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB6056 transistor as follows.

CEB6056 Transistor Specification

Transistor Code		CEB6056
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		375pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		15nS
Total Gate Charge		77nC

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