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CEB603AL MOSFET Transistor

The CEB603AL is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB603AL transistor as follows.

Circuit diagram symbol of the CEB603AL transistor

CEB603AL Transistor Specification

Transistor Code CEB603AL
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 25A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.022Ohm
Power Dissipation (Maximum) PD 60W
Drain-Source Capacitance 360pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 70nS
Gate-Threshold Voltage (Maximum) 3V

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