CEB540N MOSFET Transistor

The CEB540N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB540N transistor as follows.

CEB540N Transistor Specification

Transistor Code		CEB540N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	36A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.053Ohm
Power Dissipation (Maximum)	PD	140W
Drain-Source Capacitance		196pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		10nS
Total Gate Charge		28nC

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