CEB51A3 MOSFET Transistor

The CEB51A3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB51A3 transistor as follows.

CEB51A3 Transistor Specification

Transistor Code		CEB51A3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	48A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0165Ohm
Power Dissipation (Maximum)	PD	70W
Drain-Source Capacitance		232pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		4.4nS

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