CEB50N10 MOSFET Transistor

The CEB50N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB50N10 transistor as follows.

CEB50N10 Transistor Specification

Transistor Code		CEB50N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	136W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		19nS
Total Gate Charge		49nC

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