CEB50N06 MOSFET Transistor

The CEB50N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB50N06 transistor as follows.

CEB50N06 Transistor Specification

Transistor Code		CEB50N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	131W
Drain-Source Capacitance		400pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		4V

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