CEB50N06 MOSFET Transistor

The CEB50N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB50N06 transistor as follows.

CEB50N06 Transistor Specification

Transistor Code		CEB50N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	131W
Drain-Source Capacitance		400pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		4V

UXPython is not the creator or an official representative of the CEB50N06 MOSFET transistor. You can download the official CEB50N06 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

AOB4S60L MOSFET Transistor GFB50N03 MOSFET Transistor IRLW540A MOSFET Transistor 2SK4065-DL-1E MOSFET Transistor 2SK3628 MOSFET Transistor FTK8N80DD MOSFET Transistor P9006ESG MOSFET Transistor AP9971AGS-HF MOSFET Transistor IRLZ44NSPBF MOSFET Transistor IXTA80N10T7 MOSFET Transistor IRL3103SPBF MOSFET Transistor CEB6042 MOSFET Transistor IRLS3813PBF MOSFET Transistor AP13P15GS-HF MOSFET Transistor IXTA2N100 MOSFET Transistor 2SJ297L MOSFET Transistor 2SJ605-ZJ MOSFET Transistor IRLW640A MOSFET Transistor NDB6030PL MOSFET Transistor IXTA200N055T2-7 MOSFET Transistor