CEB35P10 MOSFET Transistor

The CEB35P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB35P10 transistor as follows.

CEB35P10 Transistor Specification

Transistor Code		CEB35P10
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	32A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.076Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		335pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		7nS
Total Gate Charge		74nC

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