CEB3205 MOSFET Transistor

The CEB3205 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB3205 transistor as follows.

CEB3205 Transistor Specification

Transistor Code		CEB3205
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	108.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0085Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		1115pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		14nS
Total Gate Charge		102.3nC

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