CEB3120 MOSFET Transistor

The CEB3120 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB3120 transistor as follows.

CEB3120 Transistor Specification

Transistor Code		CEB3120
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.015Ohm
Power Dissipation (Maximum)	PD	43W
Drain-Source Capacitance		215pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		7nS

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