CEB30P03 MOSFET Transistor

The CEB30P03 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB30P03 transistor as follows.

CEB30P03 Transistor Specification

Transistor Code		CEB30P03
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.032Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		6nS

UXPython is not the creator or an official representative of the CEB30P03 MOSFET transistor. You can download the official CEB30P03 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in P-Channel MOSFET

2SJ302-Z MOSFET Transistor 2SK3811-ZP MOSFET Transistor IRL3705ZSPBF MOSFET Transistor IRL2910SPBF MOSFET Transistor IXTA50N25T MOSFET Transistor 2SK3889-01S MOSFET Transistor CEB6060L MOSFET Transistor STB434S MOSFET Transistor IRLWZ14A MOSFET Transistor IXTA200N055T2 MOSFET Transistor 2SJ605-Z MOSFET Transistor IRFW620A MOSFET Transistor IRLS4030PBF MOSFET Transistor IRLZ14S MOSFET Transistor 2SK3325 MOSFET Transistor CEB07N65 MOSFET Transistor CEB10N4 MOSFET Transistor IXTA5N60P MOSFET Transistor SM6033NSG MOSFET Transistor CEB35P10 MOSFET Transistor