CEB30P03 MOSFET Transistor

The CEB30P03 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB30P03 transistor as follows.

CEB30P03 Transistor Specification

Transistor Code		CEB30P03
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.032Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		6nS

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