CEB30N15L MOSFET Transistor

The CEB30N15L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB30N15L transistor as follows.

CEB30N15L Transistor Specification

Transistor Code		CEB30N15L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.07Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		245pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		3nS
Total Gate Charge		72nC

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