CEB3060 MOSFET Transistor

The CEB3060 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB3060 transistor as follows.

CEB3060 Transistor Specification

Transistor Code		CEB3060
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	105A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		320pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		6nS

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