CEB21A2 MOSFET Transistor

The CEB21A2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB21A2 transistor as follows.

CEB21A2 Transistor Specification

Transistor Code		CEB21A2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	43W
Drain-Source Capacitance		216pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		12nS

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