CEB20A03 MOSFET Transistor

The CEB20A03 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB20A03 transistor as follows.

CEB20A03 Transistor Specification

Transistor Code		CEB20A03
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	197A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.002Ohm
Power Dissipation (Maximum)	PD	139W
Drain-Source Capacitance		1055pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		32nS
Total Gate Charge		96nC

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