CEB16N10 MOSFET Transistor

The CEB16N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB16N10 transistor as follows.

CEB16N10 Transistor Specification

Transistor Code		CEB16N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		105pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		3nS

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