CEB15A03 MOSFET Transistor

The CEB15A03 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB15A03 transistor as follows.

CEB15A03 Transistor Specification

Transistor Code		CEB15A03
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	190A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		1570pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		21nS
Total Gate Charge		114.7nC

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