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CEB14G04 MOSFET Transistor

The CEB14G04 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB14G04 transistor as follows.

Circuit diagram symbol of the CEB14G04 transistor

CEB14G04 Transistor Specification

Transistor Code CEB14G04
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 140A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0036Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 570pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 12nS
Total Gate Charge 50nC

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