CEB14G04 MOSFET Transistor

The CEB14G04 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB14G04 transistor as follows.

CEB14G04 Transistor Specification

Transistor Code		CEB14G04
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	140A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0036Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		570pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		12nS
Total Gate Charge		50nC

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