CEB14A04 MOSFET Transistor

The CEB14A04 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB14A04 transistor as follows.

CEB14A04 Transistor Specification

Transistor Code		CEB14A04
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	180A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.005Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		1445pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		20nS
Total Gate Charge		110nC

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