CEB13N5 MOSFET Transistor

The CEB13N5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB13N5 transistor as follows.

CEB13N5 Transistor Specification

Transistor Code		CEB13N5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.48Ohm
Power Dissipation (Maximum)	PD	214W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		62nS
Total Gate Charge		66nC

UXPython is not the creator or an official representative of the CEB13N5 MOSFET transistor. You can download the official CEB13N5 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

IXTA2R4N120P MOSFET Transistor STB432S MOSFET Transistor IXTA260N055T2 MOSFET Transistor BRB7N65 MOSFET Transistor 2SK3513-01S MOSFET Transistor IXTA50N20P MOSFET Transistor CEB80N15 MOSFET Transistor IXTA42N15T MOSFET Transistor IXFA4N100P MOSFET Transistor NDB408A MOSFET Transistor 2SK3116-ZJ MOSFET Transistor IRLW510A MOSFET Transistor CEBF634 MOSFET Transistor FDB8030L MOSFET Transistor CEB85N75V MOSFET Transistor AP4608S MOSFET Transistor NDB5060L MOSFET Transistor CEB60N10 MOSFET Transistor NDB6060 MOSFET Transistor IXTA7N60P MOSFET Transistor