CEB13N10 MOSFET Transistor

The CEB13N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB13N10 transistor as follows.

CEB13N10 Transistor Specification

Transistor Code		CEB13N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	65W
Drain-Source Capacitance		85pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		8nS

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