CEB12P10 MOSFET Transistor

The CEB12P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB12P10 transistor as follows.

CEB12P10 Transistor Specification

Transistor Code		CEB12P10
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.315Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		140pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		12nS

UXPython is not the creator or an official representative of the CEB12P10 MOSFET transistor. You can download the official CEB12P10 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in P-Channel MOSFET

CEB14P20 MOSFET Transistor IXTA152N085T MOSFET Transistor 2SK3355 MOSFET Transistor AP9468GS MOSFET Transistor AP15T20GS-HF MOSFET Transistor IXFA4N100Q MOSFET Transistor CS640_A0H MOSFET Transistor IRLS4030PBF MOSFET Transistor 2SK3927-01S MOSFET Transistor 2SK2134-Z MOSFET Transistor CEB10N65 MOSFET Transistor 2SK3521-01SJ MOSFET Transistor IXTA06N120P MOSFET Transistor 2SJ606-ZJ MOSFET Transistor 2SJ604-Z MOSFET Transistor IXTA170N075T2 MOSFET Transistor IRFW530A MOSFET Transistor SFW9Z24 MOSFET Transistor 2SK2513-Z MOSFET Transistor 2SK3900-ZP MOSFET Transistor