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CEB12N65 MOSFET Transistor

The CEB12N65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB12N65 transistor as follows.

Circuit diagram symbol of the CEB12N65 transistor

CEB12N65 Transistor Specification

Transistor Code CEB12N65
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.73Ohm
Power Dissipation (Maximum) PD 250W
Drain-Source Capacitance 210pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 76nS
Total Gate Charge 39nC

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