CEB12N5 MOSFET Transistor

The CEB12N5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB12N5 transistor as follows.

CEB12N5 Transistor Specification

Transistor Code		CEB12N5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.54Ohm
Power Dissipation (Maximum)	PD	166W
Drain-Source Capacitance		205pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25.6nS
Total Gate Charge		58.7nC

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