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CEB12N5 MOSFET Transistor

The CEB12N5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB12N5 transistor as follows.

Circuit diagram symbol of the CEB12N5 transistor

CEB12N5 Transistor Specification

Transistor Code CEB12N5
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.54Ohm
Power Dissipation (Maximum) PD 166W
Drain-Source Capacitance 205pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25.6nS
Total Gate Charge 58.7nC

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