CEB110P03 MOSFET Transistor

The CEB110P03 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB110P03 transistor as follows.

CEB110P03 Transistor Specification

Transistor Code		CEB110P03
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-263
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	105.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0058Ohm
Power Dissipation (Maximum)	PD	96W
Drain-Source Capacitance		1505pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		3V

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