CEB10N65 MOSFET Transistor

The CEB10N65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB10N65 transistor as follows.

CEB10N65 Transistor Specification

Transistor Code		CEB10N65
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.85Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		185pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		73nS
Total Gate Charge		33nC

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