CEB08N6A MOSFET Transistor

The CEB08N6A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB08N6A transistor as follows.

CEB08N6A Transistor Specification

Transistor Code		CEB08N6A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.25Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		120pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		8nS

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