CEB06N7 MOSFET Transistor

The CEB06N7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB06N7 transistor as follows.

CEB06N7 Transistor Specification

Transistor Code		CEB06N7
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	700V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		73nS
Total Gate Charge		29nC

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