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CAS100H12AM1 MOSFET Transistor

The CAS100H12AM1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CAS100H12AM1 transistor as follows.

Circuit diagram symbol of the CAS100H12AM1 transistor

CAS100H12AM1 Transistor Specification

Transistor Code CAS100H12AM1
Transistor Type MOSFET
Control Channel Type N-Channel
Package MODULE
Drain-Source Voltage (Maximum) VDS 1200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 168A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.02Ohm
Power Dissipation (Maximum) PD 568W
Drain-Source Capacitance 970pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 76nS
Gate-Threshold Voltage (Maximum) 3.1V
Total Gate Charge 490nC

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