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C2M1000170D MOSFET Transistor

The C2M1000170D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the C2M1000170D transistor as follows.

Circuit diagram symbol of the C2M1000170D transistor

C2M1000170D Transistor Specification

Transistor Code C2M1000170D
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247-3
Drain-Source Voltage (Maximum) VDS 1700V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 4.9A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.1Ohm
Power Dissipation (Maximum) PD 69W
Drain-Source Capacitance 12pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 46nS
Gate-Threshold Voltage (Maximum) 2.4V
Total Gate Charge 13nC

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