BVSS123L MOSFET Transistor

The BVSS123L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BVSS123L transistor as follows.

BVSS123L Transistor Specification

Transistor Code		BVSS123L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-23
Transistor SMD Code		SA
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	0.17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	6Ohm
Power Dissipation (Maximum)	PD	0.225W
Drain-Source Capacitance		9pF
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2.6V

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