BUZ907DP MOSFET Transistor

The BUZ907DP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ907DP transistor as follows.

BUZ907DP Transistor Specification

Transistor Code		BUZ907DP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO3PBL
Drain-Source Voltage (Maximum)	VDS	220V
Gate-Source Voltage (Maximum)	VGS	14V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.75Ohm
Power Dissipation (Maximum)	PD	250W
Operating Junction Temperature (Maximum)		150°C

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