BUZ907 MOSFET Transistor

The BUZ907 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ907 transistor as follows.

BUZ907 Transistor Specification

Transistor Code		BUZ907
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO3
Drain-Source Voltage (Maximum)	VDS	220V
Gate-Source Voltage (Maximum)	VGS	14V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	125W
Operating Junction Temperature (Maximum)		150°C

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