BUZ906DP MOSFET Transistor

The BUZ906DP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ906DP transistor as follows.

BUZ906DP Transistor Specification

Transistor Code		BUZ906DP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO3PBL
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	14V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.6Ohm
Power Dissipation (Maximum)	PD	250W
Operating Junction Temperature (Maximum)		150°C

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