BUZ906 MOSFET Transistor

The BUZ906 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ906 transistor as follows.

BUZ906 Transistor Specification

Transistor Code		BUZ906
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO3
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	14V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		150°C

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