BUZ900P MOSFET Transistor

The BUZ900P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ900P transistor as follows.

BUZ900P Transistor Specification

Transistor Code		BUZ900P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	160V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		500pF
Operating Junction Temperature (Maximum)		150°C

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