BUZ900DP MOSFET Transistor

The BUZ900DP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ900DP transistor as follows.

BUZ900DP Transistor Specification

Transistor Code		BUZ900DP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3PBL
Drain-Source Voltage (Maximum)	VDS	160V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.75Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		950pF
Operating Junction Temperature (Maximum)		150°C

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