BUZ900D MOSFET Transistor

The BUZ900D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ900D transistor as follows.

BUZ900D Transistor Specification

Transistor Code		BUZ900D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3
Drain-Source Voltage (Maximum)	VDS	160V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.75Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		950pF
Operating Junction Temperature (Maximum)		150°C

UXPython is not the creator or an official representative of the BUZ900D MOSFET transistor. You can download the official BUZ900D MOSFET transistor datasheet to get more infromation about this transistor.

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