BUZ80FI MOSFET Transistor

The BUZ80FI is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ80FI transistor as follows.

BUZ80FI Transistor Specification

Transistor Code		BUZ80FI
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOWATT220
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		850pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		42nC

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