BUZ50BSM MOSFET Transistor

The BUZ50BSM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ50BSM transistor as follows.

BUZ50BSM Transistor Specification

Transistor Code		BUZ50BSM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220SM
Drain-Source Voltage (Maximum)	VDS	1000V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2Ohm
Power Dissipation (Maximum)	PD	75W
Operating Junction Temperature (Maximum)		150°C

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