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BUZ50B-220M MOSFET Transistor

The BUZ50B-220M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ50B-220M transistor as follows.

Circuit diagram symbol of the BUZ50B-220M transistor

BUZ50B-220M Transistor Specification

Transistor Code BUZ50B-220M
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220M
Drain-Source Voltage (Maximum) VDS 1000V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 10Ohm
Power Dissipation (Maximum) PD 75W
Drain-Source Capacitance 300pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 150nS

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