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BUZ31 MOSFET Transistor

The BUZ31 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ31 transistor as follows.

Circuit diagram symbol of the BUZ31 transistor

BUZ31 Transistor Specification

Transistor Code BUZ31
Transistor Type MOSFET
Control Channel Type N-Channel
Package PG-TO-220-3
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 14.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.2Ohm
Power Dissipation (Maximum) PD 95W
Drain-Source Capacitance 180pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 50nS
Gate-Threshold Voltage (Maximum) 4V

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